FDMA530PZ

FDMA530PZ Single P-Channel PowerTrench® MOSFET January 2007 FDMA530PZ Single P-Channel –30V, –6.8A, 35mΩ Features PowerTrench® tm MOSFET General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications . It features a MOSFET with low on-state resistance. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. „ Max rDS(on) = 35mΩ at VGS = –10V, ID = –6.8A „ Max rDS(on) = 65mΩ at VGS = –4.5V, ID = –5.0A „ Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm „ RoHS Compliant Pin 1 D D G Bottom Drain Contact Drain Source D D 1 6 D D S 2 5 www.DataSheet4U.com G 3 4 D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings –30 ±25 –6.8 –24 2.4 0.9 –55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 52 145 °C/W Package Marking and Ordering Information Device Marking 530 Device FDMA530PZ Package MicroFET 2X2 Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDMA...