FDMC8554

FDMC8554 N-Channel PowerTrench® MOSFET February 2007 FDMC8554 N-Channel Power Trench® MOSFET 20V, 16.5A, 5mΩ Features General Description „ Max rDS(on) = 5mΩ at VGS = 10V, ID = 16.5A „ Max rDS(on) = 6.4mΩ at VGS = 4.5V, ID = 14A „ Low Profile - 1mm max in a MicroFET 3.3x3.3 mm „ RoHS Compliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for switching performance and ultra low rdson. Application „ Synchronous rectifier „ ORing FET „ POL rectifier Bottom 7 8 D D D D Top 5 6 D D www.DataSheet4U.com 5 6 7 8 4 3 2 1 G S S S 4 3 2 1 S S S G D D Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 20 ±20 16.5 72 16.5 36 41 2.0 -55 to +150 W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 60 °C/W Package Marking and Ordering Information Device Marking FDMC8554 Device FDMC8554 Package Power 33 Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©2007 Fairchild Semiconductor Corporation FDMC8554 Rev.C 1 www.fairchildsemi.com FDMC8554 N-C...