N-Channel UltraFET Trench MOSFET
FDMS2734 N-Channel UltraFET Trench® MOSFET
March 2011
FDMS2734 N-Channel UltraFET Trench® MOSFET
250V, 14A, 122m:
Fe...
Description
FDMS2734 N-Channel UltraFET Trench® MOSFET
March 2011
FDMS2734 N-Channel UltraFET Trench® MOSFET
250V, 14A, 122m:
Features
General Description
Max rDS(on) = 122m: at VGS = 10V, ID = 2.8A Max rDS(on) = 130m: at VGS = 6V, ID = 1.7A Low Miller Charge Optimized efficiency at high frequencies RoHS Compliant
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Application
DC - DC Conversion
Pin 1
S S SG
DD DD Power 56 (Bottom view)
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS
ID
PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited) -Continuous -Pulsed
TC = 25°C TA = 25°C
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a) (Note 1a)
Ratings 250 ±20 14 2.8 30 78 2.5
-55 to +150
Units V V
A
W °C
RTJC RTJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.6 50
°C/W
Device Marking FDMS2734
Device FDMS2734
Package Power 56
Reel Size 13’’
Tape Width 12mm
Quantity 3000 units
©2011 Fairchild Semiconductor Corporation FDMS2734 Rev.C1
1
www.fairchildsemi.com
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