FDMS5672

FDMS5672 N-Channel UltraFET Trench® MOSFET FDMS5672 N-Channel UltraFET Trench® MOSFET 60V, 22A, 11.5mΩ March 2015 Features General Description „ Max rDS(on) = 11.5mΩ at VGS = 10V, ID = 10.6A „ Max rDS(on) = 16.5mΩ at VGS = 6V, ID = 8A „ Typ Qg = 32nC at VGS = 10V „ Low Miller Charge „ Optimized Efficiency at High Frequencies „ RoHS Compliant UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Application „ DC - DC Conversion Pin 1 S S SG DD D D Power 56 (Bottom view) D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted. Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25°C TC = 100°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 5) (Note 5) (Note 1a) (Note 4) (Note 3) (Note 1a) Ratings 60 ±20 65 39 10.6 176 337 78 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 1.6 (Note 1a) 50 °C/W Device Marking FDMS5672 Device FDMS5672 Package Power 56 Reel Size 13’’ Tape Width 12mm Quantity 3000 ...