N-Channel MOSFET
FDN361BN 30V N-Channel, Logic Level, PowerTrench MOSFET
Fe bruary 2009
FDN361BN
30V N-Channel, Logic Level, PowerTren...
Description
FDN361BN 30V N-Channel, Logic Level, PowerTrench MOSFET
Fe bruary 2009
FDN361BN
30V N-Channel, Logic Level, PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
x 1.4 A, 30 V.
RDS(ON) = 110 m: @ VGS = 10 V RDS(ON) = 160 m: @ VGS = 4.5 V
x Low gate charge
x Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities
x High performance trench technology for extremely low RDS(ON)
D
D
S
SuperSOT TM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RTJA
Thermal Resistance, Junction-to-Ambient
RTJC
Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size...
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