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FDP16N50 Dataheets PDF



Part Number FDP16N50
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDP16N50 DatasheetFDP16N50 Datasheet (PDF)

FDP16N50 / FDPF16N50 500V N-Channel MOSFET February 2007 FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features • 16A, 500V, RDS(on) = 0.38Ω @VGS = 10 V • Low gate charge ( typical 32 nC) • Low Crss ( typical 20 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailor.

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FDP16N50 / FDPF16N50 500V N-Channel MOSFET February 2007 FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features • 16A, 500V, RDS(on) = 0.38Ω @VGS = 10 V • Low gate charge ( typical 32 nC) • Low Crss ( typical 20 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G DS TO-220 FDP Series TO-220F GD S FDPF Series S www.DataSheet4U.com Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDP16N50 500 16 9.6 64 ±30 780 16 20 4.5 200 1.59 FDPF16N50 16 * 9.6 64 Unit V A A A V mJ A mJ V/ns 52 0.41 -55 to +150 300 W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FDP16N50 0.63 0.5 62.5 FDPF16N50 2.4 -62.5 Unit °C/W °C/W °C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP16N50 / FDPF16N50 Rev. B FDP16N50 / FDPF16N50 500V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDP16N50 FDPF16N50 Device FDP16N50 FDPF16N50 Package TO-220 TO-220F Reel Size - Tape Width - Quantity 50 50 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Conditions VGS = 0V, ID = 250µA ID = 250µA, Referenced to 25°C VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 8A VDS = 40V, ID = 8A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 500 ------ Typ. -0.5 ----- Max Units --1 10 100 -100 V V/°C µA µA nA nA On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.31 23 5.0 0.38 -V Ω S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance ---1495 235 20 1945 310 30 pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400V, ID = 16A VGS = 10V (Note 4, 5) (Note 4, 5) VDD = 250V, ID = 16A RG = 25Ω -------- 40 150 65 80 32 8.5 14 90 310 140 170 45 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.5mH, IAS = 16A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 16A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 16A VGS = 0V, IS = 16A dIF/dt =100A/µs (Note 4) ------ ---490 5.0 9.2 37 1.4 --- A A V ns µC 2 FDP16N50 / FDPF16N50 Rev. B www.fairchildsemi.com FDP16N50 / FDPF16N50 500V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 2 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 10 1 ID, Drain Current [A] 10 1 150 C 25 C -55 C * Notes : 1. VDS = 40V 2. 250µs Pulse Test o o o 10 0 * Notes : 1. 250µs Pulse Test 10 -1 2. TC = 25 C o 10 -1 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.6 RDS(ON) [Ω], Drain-Source On-Resistance 0.5 VGS = 10V 0.4 IDR, Reverse Drain Current [A] 10 1 VGS = 20V 0.3 150oC 25 C o * Not.


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