FDP39N20

FDP39N20 / FDPF39N20 — N-Channel UniFETTM MOSFET FDP39N20 / FDPF39N20 N-Channel UniFETTM MOSFET 200 V, 39 A, 66 mΩ Features RDS(on) = 66 mΩ (Max.) @ VGS = 10 V, ID = 19.5 A Low Gate Charge (Typ. 38 nC) Low Crss (Typ. 57 pF) 100% Avalanche Tested Applications PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply August 2014 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G GDS TO-220 GDS TO-220F DS G TO-220F (L-formed) Absolute Maximum Ratings TC = 25°C unless otherwise noted. S Symbol Parameter FDP39N20 FDPF39N20 / FDPF39N20TLDTU VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 200 39 39 * 23.4 23.4 * 156 156 * ±30 860 39 25.1 4.5 PD Power Dissipation (TC = 25°C) - Derate Above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperatu...