FDP7N50

FDP7N50/FDPF7N50 500V N-Channel MOSFET March 2007 FDP7N50/FDPF7N50 500V N-Channel MOSFET Features 7A, 500V, RDS(on) = 0.9Ω @VGS = 10 V Low gate charge ( typical 12.8 nC) Low Crss ( typical 9 pF) Fast switching 100% avalanche tested Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G DS TO-220 FDP Series GD S www.DataSheet4U.com TO-220F FDPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDP7N50 7 4.2 28 FDPF7N50 500 7* 4.2 * 28 * ±30 270 7 8.9 4.5 Unit V A A A V mJ A mJ V/ns 89 0.71 -55 to +150 300 39 0.31 W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5...