FDS8880

FDS8880 N-Channel PowerTrench® MOSFET April 2005 FDS8880 N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ Features r DS(ON) = 10mΩ, VGS = 10V, ID = 11.6A r DS(ON) = 12mΩ, VGS = 4.5V, ID = 10.7A High performance trench technology for extremely low r DS(ON) Low gate charge High power and current handling capability General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. Applications DC/DC converters www.DataSheet4U.com Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 SO-8 ©2005 Fairchild Semiconductor Corporation FDS8880 Rev. A1 1 www.fairchildsemi.com FDS8880 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TA = 25oC, VGS = 10V, R θJA = 50oC/W) Continuous (TA = 25 C, VGS = 4.5V, Rθ JA = 50 C/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature o o Ratings 30 ±20 11.6 10.7 Figure 4 82 2.5 20 -55 to 150 Units V V A A A mJ W mW/oC o C Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) Thermal Resistance, Junction to Ambient at 1000 second...