N-Channel MOSFET
FDS8870 N-Channel PowerTrench® MOSFET
April 2007
FDS8870
tm
N-Channel PowerTrench® MOSFET
30V, 18A, 4.2mΩ
Features...
Description
FDS8870 N-Channel PowerTrench® MOSFET
April 2007
FDS8870
tm
N-Channel PowerTrench® MOSFET
30V, 18A, 4.2mΩ
Features
rDS(on) = 4.2mΩ, VGS = 10V, ID = 18A rDS(on) = 4.9mΩ, VGS = 4.5V, ID = 17A High performance trench technology for extremely low
rDS(on) Low gate charge
High power and current handling capability
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications
DC/DC converters
Branding Dash
5 1
2 3 4
SO-8
5
4
6
3
7
2
8
1
©2007 Fairchild Semiconductor Corporation
1
FDS8870 Rev. B
www.fairchildsemi.com
FDS8870 N-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W) Continuous (TA = 25oC, VGS = 4.5V, RθJA = 50oC/W) Pulsed
EAS
Single Pulse Avalanche Energy (Note 1)
Power dissipation
PD
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC RθJA RθJA
Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient (Note 2a) Thermal Resistance, Junction to Ambient (Note 2b)
Package Marking and Ordering Information
Device Marking FDS8870
Device FDS8870
Package SO-8
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