FDZ493P

FDZ493P P-Channel 2.5V Specified PowerTrench® BGA MOSFET November 2006 FDZ493P P-Channel 2.5V Specified PowerTrench® BGA MOSFET –20V, –4.6A, 46mΩ Features General Description tm „ Max rDS(on) = 46mΩ at VGS = –4.5V, ID = –4.6A „ Max rDS(on) = 72mΩ at VGS = –2.5V, ID = –3.6A „ Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of SSOT-6. „ Ultra-thin package: less than 0.80 mm height when mounted to PCB. „ Outstanding thermal transfer characteristics:4 times better than SSOT-6. „ Ultra-low Qg x rDS(on) figure-of-merit. „ RoHS Compliant. Combining Fairchild's advanced 2.5V specified PowerTrench® process with state of the art BGA packaging process, the FDZ493P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handing capability,ultra-low profile packaging, low gate charge, and low rDS(on). Application „ Battery management „ Load switch „ Battery protection S GATE G www.DataSheet4U.com D BOTTOM TOP MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation TA = 25°C (Note 1a) Operating and Storage Junction Temperature Range TA = 25°C (Note 1a) Ratings –20 ±12 –4.6 –10 1.7 –55 to +150 Units V V A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 72 ...