FQB9N50CF 500V N-Channel MOSFET
October 2006
FRFET
FQB9N50CF
500V N-Channel MOSFET
Features
• 9A, 500V, RDS(on) = 0.85...
FQB9N50CF 500V N-Channel MOSFET
October 2006
FRFET
FQB9N50CF
500V N-Channel MOSFET
Features
9A, 500V, RDS(on) = 0.85 Ω @VGS = 10 V Low gate charge ( typical 28nC) Low Crss ( typical 24pF) Fast switching 100% avalanche tested Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
D
D
G G S
D2-PAK
FQB Series
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S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current
Parameter
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
FQB9N50CF
500 9 5.7 36 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units
V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
300 5 9.6 4.5 173 1.38 -55 to +150 300
Thermal Characteristics
Symbol
RθJC R...