N-Channel MOSFET
FQB9N50C — N-Channel QFET® MOSFET
FQB9N50C
N-Channel QFET® MOSFET
500 V, 9 A, 800 mΩ
November 2013
Features
• 9 A, 50...
Description
FQB9N50C — N-Channel QFET® MOSFET
FQB9N50C
N-Channel QFET® MOSFET
500 V, 9 A, 800 mΩ
November 2013
Features
9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A Low Gate Charge (Typ. 28 nC) Low Crss (Typ. 24 pF) 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D D
G S
D2-PAK
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
- Derate above 25°C
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max.
S
FQB9N50CTM 500 9 5.4 36 ± 30 360 9 13.5 4.5...
Similar Datasheet