FQPF10N50CF

FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET December 2006 FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V Low gate charge (typical 43 nC) Low Crss (typical 16pF) Fast switching 100% avalanche tested Improved dv/dt capability Fast recovery body diode TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G DS TO-220 FQP Series GD S www.DataSheet4U.com TO-220F FQPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (Note 2) (Note 1) (Note 1) (Note 3) Parameter FQP10N50CF 10 6.35 (Note 1) FQPF10N50CF 500 10* 6.35* 40* ± 30 388 10 14.3 4.5 Unit V A A A V mJ A mJ V/n...