CEG8205

CEG8205 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.5A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. G2 S2 S2 D D S1 S1 G1 1 2 3 4 8 D 7 S2 6 S2 5 G2 G1 S1 S1 D TSSOP-8 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C ±10 4.5 25 1.0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 125 Units C/W 2002.December 8 - 14 http://www.cetsemi.com CEG8205 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd...