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CEH3456
N-Channel Enhancement Mode Field Effect Transistor
Description
CEH3456 N-Channel Enhancement Mode Field Effect
Transistor
FEATURES 30V, 5.5A, RDS(ON) = 42mΩ @VGS = 10V. RDS(ON) = 59mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 S(4) G(3) D(1,2,5,6,) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Sourc...
CET
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CEH3456
N-Channel Enhancement Mode Field Effect Transistor
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