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CEM4282 Dataheets PDF



Part Number CEM4282
Manufacturers CET
Logo CET
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet CEM4282 DatasheetCEM4282 Datasheet (PDF)

CEM4282 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 6.6A, RDS(ON) = 36mΩ @VGS = 10V. RDS(ON) = 48mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D 7 D 6 D 5 5 Lead free product is acquired. Surface mount Package. 8 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbo.

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CEM4282 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 6.6A, RDS(ON) = 36mΩ @VGS = 10V. RDS(ON) = 48mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D 7 D 6 D 5 5 Lead free product is acquired. Surface mount Package. 8 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 40 Units V V A A W C ±20 6.6 26 2.5 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units C/W Details are subject to change without notice . 1 Rev 1. 2006.Sep http://www.cetsemi.com CEM4282 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1.9A VDS = 20V, ID = 6A, VGS = 4.5V VDD = 20V, ID = 6A, VGS = 10V, RGEN = 3Ω 10 2 25 2 6.4 1.7 2.8 6.6 1.3 20 5 50 5 8.5 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = 5V, ID = 6.6A VDS = 15V, VGS = 0V, f = 1.0 MHz 5 675 105 60 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 6.6A VGS = 4.5V, ID = 5.3A 1 30 38 3 36 48 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 40 1 100 -100 V µA Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units nA nA 6 Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 CEM4282 20 VGS=10,8,6V 15 25 C ID, Drain Current (A) 12 VGS=4V ID, Drain Current (A) 16 12 9 8 6 4 3 TJ=125 C 0 -55 C 2 4 5 6 VGS=3V 0 0 1 2 3 4 0 1 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 900 750 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 600 450 300 150 0 0 5 10 Coss Crss 15 20 25 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=6.6A VGS=10V C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 1 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=250µA IS, Source-drain current (A) 25 50 75 100 125 150 10 10 0 10 -25 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CEM4282 VGS, Gate to Source Voltage (V) 5 VDS=20V ID=6A 10 2 RDS(ON)Limit ID, Drain Current (A) 4 10 1 1ms 10ms 100ms 1s DC 4 3 10 0 2 1 10 -1 0 0 1.5 3.0 4.5 6.0 7.5 10 -2 TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms 10 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 PDM t1 t2 Single Pulse 1. R£cJA (t)=r (t) * R£cJA 2. R£cJA=See Datasheet 3. TJM-TA = P* R£cJA (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 .


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