Document
FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK
0 October 2006
FGP7N60RUFD
600V, 7A RUF IGBT CO-PAK
Features
• High speed switching • Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A • High input impedance • CO-PAK, IGBT with FRD : trr = 50 ns (typ.) • Short Circuit rated, 10us @ TC=100°C, VGE=15V, VCE=300V
Applications
Motor controls and general purpose inverters.
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature.
C
G
1
TO-220 2.Collector 3.Emitter
1.Gate
E
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Description
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C
FGP7N60RUFD
600 ± 20 14 7 21 12 60 69 28 -55 to +150 -55 to +150 300
Units
V V A A A A A W W °C °C °C
Thermal Characteristics
Symbol
RθJC(IGBT) RθJC(DIODE) RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Typ.
----
Max.
1.8 3.0 62.5
Units
°C/W °C/W °C/W
©2005 Fairchild Semiconductor Corporation
1
FGP7N60RUFD Rev. A
www.fairchildsemi.com
FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK
Package Marking and Ordering Information
Device Marking
FGP7N60RUFD
Device
FGP7N60RUFDTU
Package
TO-220
Packaging Type
Rail / Tube
Qty per Tube
50ea
Max Qty per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 250uA VGE = 0V, IC = 3mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
600 ----
-0.6 ---
--250 ± 100
V V/°C uA nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 7mA, VCE = VGE IC = 7A, VGE = 15V IC = 7A, VGE = 15V, TC = 125°C IC = 14 A, VGE = 15V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---510 55 15 ---pF pF pF 5.0 ---6.5 1.95 2.1 2.65 8.0 2.8 --V V V V
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance Measured 5mm from PKG VCE = 300 V, IC = 7A, VGE = 15V VCC = 300 V, IC = 7 A, RG =30Ω, VGE = 15V, Inductive Load, TC = 125°C VCC = 300 V, IC = 7A, RG = 30Ω, VGE = 15V, Inductive Load, TC = 25°C ------------------60 60 60 170 0.23 0.10 0.33 65 70 55 350 0.25 0.27 0.52 24 4 10 7.5 --80 280 --0.5 -------36 6 15 -ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC nH
FGP7N60RUFD Rev. A
2
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FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK
Electrical Characteristics of DIODE T
Symbol
VFM trr Irr Qrr
C
= 25°C unless otherwise noted
Parameter
Diode Forward Voltage
Test Conditions
IF = 7A IF = 7A dI/dt = 200 A/µs TC = 25°C TC = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C
Min.
---------
Typ.
1.65 1.58 50 58 2.5 3.3 62.5 95.7
Max.
2.1 -65 -3.75 -122 --
Units
V
Diode Reverse Recovery Time
ns
Diode Peak Reverse Recovery Current
A
Diode Reverse Recovery Charge
nC
FGP7N60RUFD Rev. A
3
www.fairchildsemi.com
FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
40
Figure 2. Typical Saturation Voltage Characteristics
40
C o m m o n E m itte r V Ge = 1 5 V Tc = 25 C o Tc = 125 C
o
T C = 25 C
o
20V 15V 12V
Collector Current, IC [A]
Collector Current, IC[A]
30
30
20
10V
20
10
V GE= 8V
10
0
0
0
2
4
6
8
0
2
4
6
8
C ollector-Em itter Voltage, V C E [V]
C o lle c to r-E m itte r V o lta g e , V c e [V ]
Figure 3. Saturation Voltage vs Case Temperature at Variant Current Level
4
Com m om Em itter V GE = 15V
Figure 4. Load Current vs Frequency
15
Vcc = 300V load Current : peak of square wave
Collector - Emitter Voltage, VCE[V]
Ic = 7 A
2
Ic =3.5 A
Load Current [A]
3
Ic = 14 A
10
5
1
0
25
50
75
100
o
125
150
0 0.1
Duty cycle : 50% o Tc = 100 C Power Dissipation = 14W 1 10 100 1000
Case Temperature, Tc [ C]
Frequenc.