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FGP7N60RUFD Dataheets PDF



Part Number FGP7N60RUFD
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description RUF IGBT CO-PAK
Datasheet FGP7N60RUFD DatasheetFGP7N60RUFD Datasheet (PDF)

FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK 0 October 2006 FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Features • High speed switching • Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A • High input impedance • CO-PAK, IGBT with FRD : trr = 50 ns (typ.) • Short Circuit rated, 10us @ TC=100°C, VGE=15V, VCE=300V Applications Motor controls and general purpose inverters. Description Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed .

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FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK 0 October 2006 FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Features • High speed switching • Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A • High input impedance • CO-PAK, IGBT with FRD : trr = 50 ns (typ.) • Short Circuit rated, 10us @ TC=100°C, VGE=15V, VCE=300V Applications Motor controls and general purpose inverters. Description Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature. C G 1 TO-220 2.Collector 3.Emitter 1.Gate E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C FGP7N60RUFD 600 ± 20 14 7 21 12 60 69 28 -55 to +150 -55 to +150 300 Units V V A A A A A W W °C °C °C Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---- Max. 1.8 3.0 62.5 Units °C/W °C/W °C/W ©2005 Fairchild Semiconductor Corporation 1 FGP7N60RUFD Rev. A www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Package Marking and Ordering Information Device Marking FGP7N60RUFD Device FGP7N60RUFDTU Package TO-220 Packaging Type Rail / Tube Qty per Tube 50ea Max Qty per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 250uA VGE = 0V, IC = 3mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ---- -0.6 --- --250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 7mA, VCE = VGE IC = 7A, VGE = 15V IC = 7A, VGE = 15V, TC = 125°C IC = 14 A, VGE = 15V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---510 55 15 ---pF pF pF 5.0 ---6.5 1.95 2.1 2.65 8.0 2.8 --V V V V Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance Measured 5mm from PKG VCE = 300 V, IC = 7A, VGE = 15V VCC = 300 V, IC = 7 A, RG =30Ω, VGE = 15V, Inductive Load, TC = 125°C VCC = 300 V, IC = 7A, RG = 30Ω, VGE = 15V, Inductive Load, TC = 25°C ------------------60 60 60 170 0.23 0.10 0.33 65 70 55 350 0.25 0.27 0.52 24 4 10 7.5 --80 280 --0.5 -------36 6 15 -ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC nH FGP7N60RUFD Rev. A 2 www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr C = 25°C unless otherwise noted Parameter Diode Forward Voltage Test Conditions IF = 7A IF = 7A dI/dt = 200 A/µs TC = 25°C TC = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C Min. --------- Typ. 1.65 1.58 50 58 2.5 3.3 62.5 95.7 Max. 2.1 -65 -3.75 -122 -- Units V Diode Reverse Recovery Time ns Diode Peak Reverse Recovery Current A Diode Reverse Recovery Charge nC FGP7N60RUFD Rev. A 3 www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Typical Performance Characteristics Figure 1. Typical Output Characteristics 40 Figure 2. Typical Saturation Voltage Characteristics 40 C o m m o n E m itte r V Ge = 1 5 V Tc = 25 C o Tc = 125 C o T C = 25 C o 20V 15V 12V Collector Current, IC [A] Collector Current, IC[A] 30 30 20 10V 20 10 V GE= 8V 10 0 0 0 2 4 6 8 0 2 4 6 8 C ollector-Em itter Voltage, V C E [V] C o lle c to r-E m itte r V o lta g e , V c e [V ] Figure 3. Saturation Voltage vs Case Temperature at Variant Current Level 4 Com m om Em itter V GE = 15V Figure 4. Load Current vs Frequency 15 Vcc = 300V load Current : peak of square wave Collector - Emitter Voltage, VCE[V] Ic = 7 A 2 Ic =3.5 A Load Current [A] 3 Ic = 14 A 10 5 1 0 25 50 75 100 o 125 150 0 0.1 Duty cycle : 50% o Tc = 100 C Power Dissipation = 14W 1 10 100 1000 Case Temperature, Tc [ C] Frequenc.


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