FJE5304D

FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling diode Suitable for Electronic Ballast Application Small Variance in Storage Time Equivalent Circuit C B 1 TO-126 2.Collector 3.Base E 1.Emitter Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC ICP IB IBP PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Base Current (DC) * Base Current (Pulse) TC = 25°C unless otherwise noted Parameter Value 700 400 12 4 8 2 4 30 - 65 ~ 150 Units V V V A A A A W °C Collector Dissipation (TC=25°C) Storage Temperature * Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0% Electrical Characteristics T Symbol BVCBO BVCEO BVEBO ICES ICEO IEBO hFE C= 25°C unless otherwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 VCE = 700V, VEB = 0 VCE = 400V, IB = 0 VEB = 12V, IC = 0 VCE = 5V, IC = 10mA VCE = 5V, IC = 2A Min. 700 400 12 Typ. Max. Units V V V 100 250 100 10 8 40 µA µA µA ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJE5304D Rev. B1 FJE5304D NPN Triple Diffused Planar Silicon Transistor ...