DatasheetsPDF.com

H11AA2-M Dataheets PDF



Part Number H11AA2-M
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description (H11AAx-M) AC Input/Phototransistor Optocouplers
Datasheet H11AA2-M DatasheetH11AA2-M Datasheet (PDF)

H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers April 2006 H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers Features ■ Bi-polar emitter input ■ Built-in reverse polarity input protection ■ Underwriters Laboratory (UL) recognized File Description The H11AAX-M series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. #E90700, Volume 2 ■ VDE approved Fil.

  H11AA2-M   H11AA2-M



Document
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers April 2006 H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers Features ■ Bi-polar emitter input ■ Built-in reverse polarity input protection ■ Underwriters Laboratory (UL) recognized File Description The H11AAX-M series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. #E90700, Volume 2 ■ VDE approved File #102497 (ordering option ‘V’) Applications ■ AC line monitor ■ Unknown polarity DC sensor ■ Telephone line interface Package and Schematic 1 6 BASE 2 5 COLL 3 4 EMITTER ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com H11AAX-M Rev. 1.0.0 H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers Absolute Maximum Ratings (TA =25°C Unless otherwise specified) Symbol TOTAL DEVICE TSTG TOPR TSOL PD EMITTER IF IF(pk) PD DETECTOR IC PD Continuous Collector Current Detector Power Dissipation Derate linearity from 25°C All All 50 150 1.76 mA mW mW/°C Continuous Forward Current Forward Current – Peak (1µs pulse, 300 pps) LED Power Dissipation Derate Linearly From 25°C All All All 60 ±1.0 120 1.41 mA A mW mW/°C Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation Derate Linearly From 25°C All All All All -40 to +150 -40 to +100 260 for 10 sec 250 2.94 °C °C °C mW mW/°C Parameter Device Value Units Electrical Characteristics (TA = 25°C Unless otherwise specified.) Individual Component Characteristics Symbol EMITTER VF CJ Input Forward Voltage Capacitance Breakdown Voltage Collector to Emitter Collector to Base Emitter to Base Emitter to Collector Leakage Current Collector to Emitter Capacitance Collector to Emitter Collector to Base Emitter to Base IF = ±10mA VF = 0 V, f = 1.0MHz All All 1.17 80 1.5 V pF Parameter Test Conditions Device Min. Typ.* Max. Unit DETECTOR BVCEO BVCBO BVEBO BVECO ICEO CCE CCB CEB IC = 1.0mA, IF = 0 IC = 100µA, IF = 0 IE = 100µA, IF = 0 IE = 100µA, IF = 0 VCE = 10 V, IF = 0 VCE = 0, f = 1MHz VCB = 0, f = 1MHz VEB = 0, f = 1MHz All All All All H11AA1,3,4(-M) H11AA2-M All All All 30 70 5 7 100 120 10 10 1 1 10 80 15 50 200 pF pF pF V V V V nA *Typical values at TA = 25°C 2 H11AAX-M Rev. 1.0.0 www.fairchildsemi.com H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers Transfer Characteristics (TA = 25°C Unless otherwise specified.) Symbol CTRCE Characteristics Current Transfer Ratio, Collector to Emitter Test Conditions IF = ±10mA, VCE = 10V Device H11AA4-M H11AA3-M H11AA1-M H11AA2-M Min. 100 50 20 10 .33 Typ.* Max. Units % Current Transfer Ratio, Symmetry VCE(SAT) Saturation Voltage, Collector to Emitter IF = ±10mA, VCE = 10V (Figure 11) IF = ±10mA, ICE = 0.5mA All All 3.0 .40 V Isolation Characteristics Symbol CI-O VISO RISO Characteristic Package Capacitance Input/Output Isolation Voltage Isolation.


H11AA1-M H11AA2-M H11AA3-M


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)