Document
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers
April 2006
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers
Features
■ Bi-polar emitter input ■ Built-in reverse polarity input protection ■ Underwriters Laboratory (UL) recognized File
Description
The H11AAX-M series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.
#E90700, Volume 2
■ VDE approved File #102497 (ordering option ‘V’)
Applications
■ AC line monitor ■ Unknown polarity DC sensor ■ Telephone line interface
Package and Schematic
1
6 BASE
2
5 COLL
3
4 EMITTER
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
H11AAX-M Rev. 1.0.0
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers
Absolute Maximum Ratings (TA =25°C Unless otherwise specified)
Symbol
TOTAL DEVICE TSTG TOPR TSOL PD EMITTER IF IF(pk) PD DETECTOR IC PD Continuous Collector Current Detector Power Dissipation Derate linearity from 25°C All All 50 150 1.76 mA mW mW/°C Continuous Forward Current Forward Current – Peak (1µs pulse, 300 pps) LED Power Dissipation Derate Linearly From 25°C All All All 60 ±1.0 120 1.41 mA A mW mW/°C Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation Derate Linearly From 25°C All All All All -40 to +150 -40 to +100 260 for 10 sec 250 2.94 °C °C °C mW mW/°C
Parameter
Device
Value
Units
Electrical Characteristics (TA = 25°C Unless otherwise specified.)
Individual Component Characteristics Symbol
EMITTER VF CJ Input Forward Voltage Capacitance Breakdown Voltage Collector to Emitter Collector to Base Emitter to Base Emitter to Collector Leakage Current Collector to Emitter Capacitance Collector to Emitter Collector to Base Emitter to Base IF = ±10mA VF = 0 V, f = 1.0MHz All All 1.17 80 1.5 V pF
Parameter
Test Conditions
Device
Min.
Typ.*
Max.
Unit
DETECTOR BVCEO BVCBO BVEBO BVECO ICEO CCE CCB CEB IC = 1.0mA, IF = 0 IC = 100µA, IF = 0 IE = 100µA, IF = 0 IE = 100µA, IF = 0 VCE = 10 V, IF = 0 VCE = 0, f = 1MHz VCB = 0, f = 1MHz VEB = 0, f = 1MHz All All All All H11AA1,3,4(-M) H11AA2-M All All All 30 70 5 7 100 120 10 10 1 1 10 80 15 50 200 pF pF pF V V V V nA
*Typical values at TA = 25°C
2 H11AAX-M Rev. 1.0.0
www.fairchildsemi.com
H11AA1-M, H11AA2-M, H11AA3-M, H11AA4-M AC Input/Phototransistor Optocouplers
Transfer Characteristics (TA = 25°C Unless otherwise specified.)
Symbol
CTRCE
Characteristics
Current Transfer Ratio, Collector to Emitter
Test Conditions
IF = ±10mA, VCE = 10V
Device
H11AA4-M H11AA3-M H11AA1-M H11AA2-M
Min.
100 50 20 10 .33
Typ.*
Max.
Units
%
Current Transfer Ratio, Symmetry VCE(SAT) Saturation Voltage, Collector to Emitter
IF = ±10mA, VCE = 10V (Figure 11) IF = ±10mA, ICE = 0.5mA
All All
3.0 .40 V
Isolation Characteristics
Symbol
CI-O VISO RISO
Characteristic
Package Capacitance Input/Output Isolation Voltage Isolation.