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CEB09N6 Dataheets PDF



Part Number CEB09N6
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEB09N6 DatasheetCEB09N6 Datasheet (PDF)

CEP09N6/CEB09N6 CEI09N6/CEF09N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP09N6 CEB09N6 CEI09N6 CEF09N6 VDSS 600V 600V 600V 600V RDS(ON) 1.2Ω 1.2Ω 1.2Ω 1.2Ω ID 9A 9A 9A 9A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G D S CEB SERIES TO-263(DD-PAK) G G D S CEI SERIES TO-262(I2-PAK) G D S .

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CEP09N6/CEB09N6 CEI09N6/CEF09N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP09N6 CEB09N6 CEI09N6 CEF09N6 VDSS 600V 600V 600V 600V RDS(ON) 1.2Ω 1.2Ω 1.2Ω 1.2Ω ID 9A 9A 9A 9A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G D S CEB SERIES TO-263(DD-PAK) G G D S CEI SERIES TO-262(I2-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD EAS IAS TJ,Tstg f TO-220F Units V V 600 ±30 9 35 156 1.25 500 9 -55 to 150 9 e e A A W W/ C mJ A C 35 50 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range 0.38 500 9 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 0.8 62.5 Limit 2.6 65 Units C/W C/W 2002.July 4 - 34 http://www.cetsemi.com CEP09N6/CEB09N6 CEI09N6/CEF09N6 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b c Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS g VSD VGS = 0V, IS = 9A VDS = 480V, ID = 2A, VGS = 10V VDD = 200V, ID = 9A, VGS = 10V, RGEN = 9.1Ω Test Condition VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 6A VDS = 50V, ID = 6A 2 1.0 5 950 135 90 23 26 105 22 73 6 45 9 1.5 45 50 165 45 85 Min 600 50 100 -100 4 1.2 Typ Max Units V µA 4 nA nA V Ω S pF pF pF ns ns ns ns nC nC nC A V VDS = 25V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L =23.4mH, IAS =9A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 5A . 4 - 35 CEP09N6/CEB09N6 CEI09N6/CEF09N6 12 10 VGS=10,9,8,7V 8 VGS=6V 6 4 2 0 0 3 6 9 12 20 25 C ID, Drain Current (A) ID, Drain Current (A) 16 12 -55 C 8 TJ=125 C 4 VGS=5V 0 0 1 2 3 4 5 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1200 1000 800 600 400 200 0 0 5 10 15 Coss Crss 20 25 Ciss 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=6A VGS=10V C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 1 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=250µA IS, Source-drain current (A) 25 50 75 100 125 150 10 10 0 10 -25 0 -1 0.4 0.8 1.2 1.6 2.0 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 4 - 36 CEP09N6/CEB09N6 CEI09N6/CEF09N6 VGS, Gate to Source Voltage (V) 15 V =480V DS ID=9A 10 2 ID, Drain Current (A) 12 4 RDS(ON)Limit 10 1 9 6 10µs 100µs 1ms 10ms DC 10 0 3 0 0 24 48 72 96 10 -1 TC=25 C TJ=150 C Single Pulse 10 0 10 1 10 2 10 3 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 1. R£cJC (t)=r (t) * R£cJC 2. R£cJC=See Datasheet 3. TJM-TC = P* R£cJC (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 - 37 .


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