CEB06N5

CEP06N5/CEB06N5 Oct. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 500V , 6.6A , RDS(ON)=1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. 4 4 D G D G G D S S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 500 Unit V V A A A W W/ C C Ć 30 6.6 20 6.6 104 0.83 -55 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA 4-17 1.2 62.5 C/W C/W CEP06N5/CEB06N5 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) 4 4 Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Symbol a Condition VDD =50V, L=24mH RG=25 Ω Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATING EAS IAS 500 6 mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS b VGS = 0V,ID = 250µA VDS = 500V, VGS = 0V VGS = Ć30V, VDS = 0V VDS = VGS, ID = 250µA VGS =10V, ID = 4A VGS = 10V, VDS = 10V VDS = 50V, ID = 4A VDD =250V, ID = 6A, VGS = 10V RGEN=18Ω 500 25 V µA Ć100 nA ON CHARACT...