CEB02N7

CEP02N7/CEB02N7 CEI02N7/CEF02N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N7 CEB02N7 CEI02N7 CEF02N7 VDSS 700V 700V 700V 700V RDS(ON) 6.6Ω 6.6Ω 6.6Ω 6.6Ω ID 1.9A 1.9A 1.9A 1.9A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. D G G D S CEI SERIES TO-262(I2-PAK) S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD EAS IAR EAR TJ,Tstg f TO-220F Units V V 700 ±30 1.9 6 60 0.48 125 2 5.4 -55 to 150 1.9 6 e e A A W W/ C mJ A mJ C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Repetitive Avalanche Current a Repetitive Avalanche Energy a 32 0.26 125 2 5.4 Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 2.1 62.5 Limit 3.9 65 Units C/W C/W 2004.October 4 - 10 http://www.cetsemi.com CEP02N7/CEB02N7 CEI02N7/CEF02N7 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Le...