CEP02N7/CEB02N7 CEI02N7/CEF02N7
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP02N7 CEB02N7 CEI02N7...
CEP02N7/CEB02N7 CEI02N7/CEF02N7
N-Channel Enhancement Mode Field Effect
Transistor FEATURES
Type CEP02N7 CEB02N7 CEI02N7 CEF02N7 VDSS 700V 700V 700V 700V RDS(ON) 6.6Ω 6.6Ω 6.6Ω 6.6Ω ID 1.9A 1.9A 1.9A 1.9A e @VGS 10V 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
G D S
CEI SERIES TO-262(I2-PAK)
S CEB SERIES TO-263(DD-PAK)
G
G D S
CEP SERIES TO-220
G
D S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD EAS IAR EAR TJ,Tstg
f
TO-220F
Units V V
700
±30
1.9 6 60 0.48 125 2 5.4 -55 to 150 1.9 6
e e
A A W W/ C mJ A mJ C
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Repetitive Avalanche Current a Repetitive Avalanche Energy
a
32 0.26 125 2 5.4
Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 2.1 62.5 Limit 3.9 65 Units C/W C/W
2004.October 4 - 10
http://www.cetsemi.com
CEP02N7/CEB02N7 CEI02N7/CEF02N7
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Le...