CEF10N4
Sep. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
450V ,5.6A ,RDS(ON)= 700mΩ @V...
CEF10N4
Sep. 2002
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
FEATURES
450V ,5.6A ,RDS(ON)= 700mΩ @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole.
G
D
6
G
D S TO-220F
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous -Pulsed
ID IDM
Drain-Source Diode Forward Current
IS
Maximum Power Dissipation @Tc=25 C Derate above 25 C
Operating and Storage Temperature Range
PD TJ, TSTG
Limit 450
30 5.6 17 5.6 45 0.36 -55 to 150
Unit V V
A A A W W/ C C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
R JC R JA
6-107
2.8 65
C/W C/W
CEF10N4
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Symbol
DRAIN-SOURCE AVALANCHE RATINGa
Condition
Min Typ Max Unit
Single Pulse Drain-Source 6 Aval...