CEP10N4/CEB10N4 CEI10N4/CEF10N4
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP10N4 CEB10N4 CEI10N4 CEF10N4 VDSS 450V 450V 450V 450V RDS(ON) 0.7Ω 0.7Ω 0.7Ω 0.7Ω ID 10A 10A 10A 10A e @VGS 10V 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-...
