N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP1165 CEB1165 CEF1165 VDSS 600V 600V 600V RDS(ON) 0.9Ω 0.9Ω 0.9Ω ID 10A 10A 10A e @VGS 10V 10V 10V
CEP1165/CEB1165 CEF1165
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
D
G
S CEB SERIES TO-263(DD-PAK)
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