CEP13N07/CEB13N07
N-Channel Enhancement Mode Field Effect Transistor FEATURES
70V, 13A, RDS(ON) = 125mΩ @VGS = 10V. RDS(ON) = 150mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
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