N-Channel Enhancement Mode Field Effect Transistor FEATURES
25V, 69A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-263 & TO-220 package.
CEP75A3/CEB75A3
D
G
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
S
ABSOLUTE...
