Document
CEP76139/CEB76139
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 75A, RDS(ON) = 7mΩ @VGS = 10V. RDS(ON) = 10mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. 100% avalanche tested. TO-220 & TO-263 package.
D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 30
Units V V A A W W/ C mJ A C
±20
75 225 75 0.5 228 100 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.0 62.5 Units C/W C/W
2004.August 4 - 166
http://www.cetsemi.com
CEP76139/CEB76139
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 40A VDS = 15, ID = 40A, VGS = 5V VDD = 15V, ID = 60A, VGS = 10V, RGEN = 6Ω 20 12 113 40 48 10 27 75 1.3 38 23 198 78 55 ns ns ns ns nC nC nC A V
c
Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 40A VGS = 4.5V, ID = 37A VDS = 10V, ID = 40A 1 5 7 45 3298 1400 287 Min 30 1 100 -100 3 7 10 Typ Max Units V
µA
4
nA nA V mΩ mΩ S pF pF pF
VDS = 15V, VGS = 0V, f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 20µH, IAS = 100A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C
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CEP76139/CEB76139
120 VGS=10,9,8,7,6,5,4V 100 80 60 40 20 60 50 40 30 25 C 20 10 TJ=125C -55 C 0 0.5 1.0 1.5 2.0 2.5 3.0 1.0 1.5 2.0 2.5 3.0 3.5
ID, Drain Current (A)
VGS=3V
VGS=2V
0 0.0
ID, Drain Current (A)
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
4200 3500 2800 2100 1400 700 Crss 0 0 5 10 15 20 25 Coss Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=40A VGS=10V
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature
VGS=0V
2
VTH, Normalized Gate-Source Threshold Voltage
VDS=VGS ID=250µA
IS, Source-drain current (A)
10
10
1
10 -25 0 25 50 75 100 125 150
0
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
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CEP76139/CEB76139
VGS, Gate to Source Voltage (V)
10 10 VDS=15V ID=40A
3
ID, Drain Current (A)
8
RDS(ON)Limit 10
2
4
100µs 1ms 10ms DC
6
4
10
1
2
0 0 10 20 30 40 50
10
0
TC=25 C TJ=175 C Single Pulse 10
-1
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective Transient Thermal Impedance
D=0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 1. R£cJC (t)=r (t) * R£cJC 2. R£cJC=See Datasheet 3. TJM-TC = P* R£cJC (t) 4. Duty Cycle, D=t1/t2
-5
10
-1
10
-2
Single Pulse
10
-3
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
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