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CEB76139 Dataheets PDF



Part Number CEB76139
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEB76139 DatasheetCEB76139 Datasheet (PDF)

CEP76139/CEB76139 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A, RDS(ON) = 7mΩ @VGS = 10V. RDS(ON) = 10mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. 100% avalanche tested. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current.

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CEP76139/CEB76139 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A, RDS(ON) = 7mΩ @VGS = 10V. RDS(ON) = 10mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. 100% avalanche tested. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 30 Units V V A A W W/ C mJ A C ±20 75 225 75 0.5 228 100 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.0 62.5 Units C/W C/W 2004.August 4 - 166 http://www.cetsemi.com CEP76139/CEB76139 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 40A VDS = 15, ID = 40A, VGS = 5V VDD = 15V, ID = 60A, VGS = 10V, RGEN = 6Ω 20 12 113 40 48 10 27 75 1.3 38 23 198 78 55 ns ns ns ns nC nC nC A V c Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 40A VGS = 4.5V, ID = 37A VDS = 10V, ID = 40A 1 5 7 45 3298 1400 287 Min 30 1 100 -100 3 7 10 Typ Max Units V µA 4 nA nA V mΩ mΩ S pF pF pF VDS = 15V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 20µH, IAS = 100A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C 4 - 167 CEP76139/CEB76139 120 VGS=10,9,8,7,6,5,4V 100 80 60 40 20 60 50 40 30 25 C 20 10 TJ=125C -55 C 0 0.5 1.0 1.5 2.0 2.5 3.0 1.0 1.5 2.0 2.5 3.0 3.5 ID, Drain Current (A) VGS=3V VGS=2V 0 0.0 ID, Drain Current (A) VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 4200 3500 2800 2100 1400 700 Crss 0 0 5 10 15 20 25 Coss Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=40A VGS=10V C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 2 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=250µA IS, Source-drain current (A) 10 10 1 10 -25 0 25 50 75 100 125 150 0 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 4 - 168 CEP76139/CEB76139 VGS, Gate to Source Voltage (V) 10 10 VDS=15V ID=40A 3 ID, Drain Current (A) 8 RDS(ON)Limit 10 2 4 100µs 1ms 10ms DC 6 4 10 1 2 0 0 10 20 30 40 50 10 0 TC=25 C TJ=175 C Single Pulse 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms 10 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 1. R£cJC (t)=r (t) * R£cJC 2. R£cJC=See Datasheet 3. TJM-TC = P* R£cJC (t) 4. Duty Cycle, D=t1/t2 -5 10 -1 10 -2 Single Pulse 10 -3 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 - 169 .


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