CEPF630B

CEPF630B/CEBF630B CEIF630B/CEFF630B N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEPF630B CEBF630B CEIF630B CEFF630B VDSS 200V 200V 200V 200V RDS(ON) 0.4Ω 0.4Ω 0.4Ω 0.4Ω ID 9A 9A 9A 9A e @VGS 10V 10V 10V 10V D PRELIMINARY Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. D G S CEB SERIES TO-263(DD-PAK) G G D S CEI SERIES TO-262(I2-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD EAS IAS TJ,Tstg f TO-220F Units V V 200 ±30 9 36 74 0.59 150 9 -55 to 150 9 e e A A W W/ C mJ A C 36 35 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range 0.28 150 9 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 1.7 62.5 Limit 3.6 65 Units C/W C/W 2004.November 4 - 194 http://www.cetsemi.com CEPF630B/CEBF630B CEIF630B/CEFF630B Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On...