CEPF630B/CEBF630B CEIF630B/CEFF630B
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEPF630B CEBF630B C...
CEPF630B/CEBF630B CEIF630B/CEFF630B
N-Channel Enhancement Mode Field Effect
Transistor FEATURES
Type CEPF630B CEBF630B CEIF630B CEFF630B VDSS 200V 200V 200V 200V RDS(ON) 0.4Ω 0.4Ω 0.4Ω 0.4Ω ID 9A 9A 9A 9A e @VGS 10V 10V 10V 10V D PRELIMINARY
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
S CEB SERIES TO-263(DD-PAK)
G
G D S
CEI SERIES TO-262(I2-PAK)
G D S
CEP SERIES TO-220
G
D S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD EAS IAS TJ,Tstg
f
TO-220F
Units V V
200
±30
9 36 74 0.59 150 9 -55 to 150 9
e e
A A W W/ C mJ A C
36 35
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
0.28 150 9
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 1.7 62.5 Limit 3.6 65 Units C/W C/W
2004.November 4 - 194
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CEPF630B/CEBF630B CEIF630B/CEFF630B
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On...