CED02N6/CEU02N6
Dec. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 1.9A , RDS(ON)...
CED02N6/CEU02N6
Dec. 2002
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
FEATURES
600V , 1.9A , RDS(ON)=5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-251 & TO-252 package.
D
6
G
D G S
G D S
CEU SERIES TO-252AA(D-PAK)
CED SERIES TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous (Tc=25 C) -Continuous (Tc=100 C) -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID ID IDM IS PD TJ, TSTG Limit 600 Unit V V A A A A W W/ C C
Ć 30
1.9 1.2 6 6 43 0.34 -55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
6-77
RįJC RįJA
2.9 50
C/W C/W
CED02N6/CEU02N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current
Symbol
a
Condition
VDD =50V, L=60mH RG=9.1 Ω
Min Typ Max Unit
DRAIN-SOURCE AVALANCHE RATING
6
EAS IAS
125 2
mJ A
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS
b
VGS = 0V,ID = 250µA VDS = 600V, VGS = 0V VGS = Ć30V, VDS = 0V VDS = VGS, ID = 250µA VGS =10V, ID = 1A VGS = 10V, VDS = 10V VDS = 50V, ID = 1A VDD = 300V, ID = 2A, VGS = 10V ...