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CEU3172 Dataheets PDF



Part Number CEU3172
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEU3172 DatasheetCEU3172 Datasheet (PDF)

CED3172/CEU3172 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 36A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25.

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CED3172/CEU3172 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 36A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30 Units V V A A W W/ C C ±20 36 140 42 0.33 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3 50 Units C/W C/W Specification and data are subject to change without notice . 1 Rev 1. 2006.April http://www.cetsemi.com CED3172/CEU3172 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 2.3A VDS = 15V, ID = 9.5A, VGS = 5V VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω 16 9 31 10 10.4 3.5 3.8 36 1.2 30 20 60 20 13 ns ns ns ns nC nC nC A V VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 9.5A VGS = 4.5V, ID = 8.0A VDS = 5V, ID = 9.5A VDS = 15V, VGS = 0V, f = 1.0 MHz 1 16 22 5 1080 220 140 3 20 28 V mΩ mΩ S pF pF pF BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 30 1 100 -100 V µA Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units nA nA 6 gFS Ciss Coss Crss Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 CED3172/CEU3172 50 VGS=10,6,5,4.5V 50 ID, Drain Current (A) VGS=4.0V 30 VGS=3.5V ID, Drain Current (A) 40 40 30 5 25 C 20 20 10 10 TJ=125 C 0 -55 C 3 4 5 VGS=3.0V 0 0 1 2 3 4 1 2 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1800 1500 1200 900 600 300 0 0 5 10 Coss Crss 15 20 25 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics Ciss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=9.5A VGS=10V C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 2 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=250µA IS, Source-drain current (A) 25 50 75 100 125 150 10 10 1 10 -25 0 0 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CED3172/CEU3172 VGS, Gate to Source Voltage (V) 10 V =15V DS ID=9.5A 10 3 ID, Drain Current (A) 8 RDS(ON)Limit 10 2 6 4 10 1 100µs 1ms 10ms DC 2 0 0 5 10 15 20 10 0 TC=25 C TJ=150 C Single Pulse 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 1. R£cJC (t)=r (t) * R£cJC 2. R£cJC=See Datasheet 3. TJM-TC = P* R£cJC (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 .


CED3172 CEU3172 CED3252


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