CEU71A3

CED71A3/CEU71A3 Dec. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 65A , RDS(ON)=10m Ω @VGS=10V. RDS(ON)=14m Ω @VGS=5.0V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-252 & TO-251 package. D 6 G D G S G D S CEU SERIES TO-252AA(D-PAK) CED SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Unit V V A A A W W/ C C Ć20 65 100 65 69 0.56 -55 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA 6-67 1.8 40 C/W C/W CED71A3/CEU71A3 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS b Symbol Condition VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS =Ć20V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 15A VGS = 5.0V, ID = 13A VGS = 10V, VDS = 5V VDS = 5V, ID = 12A Min Typ Max Unit 30 1 V µA Ć100 nA 6 Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS a Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 1 8.5 65 26 2152 965 234 VDD = 15V, ID =1A, VGS...