MPS651

MPS651 MPS651 Switching and Amplifier Applications 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Ratings 80 60 5 0.8 625 150 -55 ~ 150 Units V V V A mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 hFE4 VCE (sat) VBE (sat) VBE (on) fT Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC=100µA, IE=0 IC=10mA, IB=0 IC=10µA, IC=0 VCB=80V, IE=0 VEB=4.0V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=500mA VCE=2V, IC=1.0A VCE=2V, IC=2.0A IC=1.0A, IB=100mA IC=2.0A, IB=200mA IC=1.0A, IB=100mA VCE=2.0V, IC=1.0A VCE=5.0V, IC=50mA, f=100MHz 75 75 75 75 40 300 500 1.2 1.0 mV V V MHz Min. 80 60 5 0.1 0.1 Typ. Max. Units V V V µA µA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Band Width Product ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 MPS651 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions ...