MPS6521

MPS6521 MPS6521 NPN General Purpose Amplifier This device is deisgned for general purpose amplifier applications at collector to 300mA. Sourced from process 10. 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 25 40 4.0 100 - 55 ~ 150 Units V V V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) Parameter Test Condition IC = 500µA, IB = 0 IE = 10µA, IC = 0 VCB = 30V, IE = 0 VCE = 10V, IC = 100µA VCE = 10V, IC = 2.0mA IC = 50mA, IB = 5.0mA 150 300 Min. 25 4 50 Max. Units V V nA Collector-Emitter Sustaining Voltage * Emitter-Base Breakdown Voltage Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage On Characteristics 600 0.5 V * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 5 83.3 200 Units mW mW/°C °C/W °C/W ©2003 Fairchild Semiconductor Corporation Rev. A, November 2003 MPS6521 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.2...