MPSA77

SEMICONDUCTOR TECHNICAL DATA DARLINGTON TRANSISTOR B MPSA77 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES ᴌComplementary to MPSA27. A N K D E G MAXIMUM RATINGS (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VEBO IC PC Tj Tstg RATING -60 -60 -10 -500 625 150 -55ᴕ150 UNIT V V L H F F V mA mW ᴱ ᴱ 1 2 3 M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage * Pulse Test : PWᴪ300Ọ S, Duty Cycleᴪ2%. SYMBOL ICBO IEBO V(BR)CES V(BR)CBO hFE(1) * hFE(2) * VCE(sat) * VBE * TEST CONDITION VCE=-50V, IE=0 VEB=-10V, IB=0 IC=-100Ọ A, IB=0 IC=-100Ọ A, IE=0 VCE=-5V, IC=-10mA VCE=-5V, IC=-100mA IC=-100mA, IB=-0.1mA VCE=-5V, IC=-100mA MIN. -60 -60 10K 10K TYP. MAX. -100 -100 -1.5 -2 V V UNIT nA nA V V 2002. 2. 20 Revision No : 1 1/2 MPSA77 h FE - I C 1000k DC CURRENT GAIN h FE 300K 100K 30K 10K 3K 1K -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) VCE =-5V BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) ...