Purpose Amplifier. PN3569 Datasheet

PN3569 Amplifier. Datasheet pdf. Equivalent


Part PN3569
Description NPN General Purpose Amplifier
Feature PN3569 PN3569 NPN General Purpose Amplifier • This device is designed for use at general purpose am.
Manufacture Fairchild Semiconductor
Datasheet
Download PN3569 Datasheet


PN3569 Datasheet
Small Signal Transistors TO-92 Case (Continued) TYPE NO. DES PN3569 Datasheet
PN3569 PN3569 NPN General Purpose Amplifier • This device i PN3569 Datasheet
PN3569 Datasheet
Recommendation Recommendation Datasheet PN3569 Datasheet




PN3569
PN3569
NPN General Purpose Amplifier
• This device is designed for use at general purpose amplifiers and
switches requiring collecor currents to 300mA.
1 TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
Value
40
80
5.0
500
- 55 ~ 150
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
Collector-Emitter Sustaining Voltage *
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cut-off Current
On Characteristics
IC = 30µA, IB = 0
IC = 100µA, IE = 0
IE = 10µA, IC = 0
VCB = 40V, IE = 0
VEB = 4.0V, IC = 0
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal Characteristics
VCE = 1V, IC = 150mA
VCE = 1V, IC = 30mA
IC = 150mA, IB = 15mA
IC = 150mA, VCE = 1V
hfe Small Signal current Gain
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
IC = 50mA, VCE = 10V, f = 10MHz
Min.
40
80
5.0
100
100
3.0
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Max. Units
V
V
50 nA
25 nA
300
0.25
1.1
V
V
30
Units
mW
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, November 2003



PN3569
Package Dimensions
TO-92
4.58
+0.25
–0.15
0.46 ±0.10
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
0.38
+0.10
–0.05
©2003 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A, November 2003







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