QSE213C

QSE213C/QSE214C Plastic Silicon Infrared Phototransistor March 2006 QSE213C/QSE214C Plastic Silicon Infrared Phototransistor Features ■ ■ ■ ■ ■ ■ NPN Silicon Phototransistor Package Type: Sidelooker Medium Reception Angle, 50° Daylight Filter Clean Epoxy Package Matching Emitter: QEE213 Description The QSE213C/QSE214C is a silicon phototransistor encapsulated in a medium angle, infrared transparent, clear thin plastic sidelooker package. Package Dimensions 0.060 (1.50) 0.174 (4.44) R 0.030 (0.76) 0.047 (1.20) 0.224 (5.71) 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN EMITTER 0.020 (0.51) SQ. (2X) 0.100 (2.54) Schematic Collector Notes: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. Emitter ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com QSE213C/QSE214C Rev. 1.0.0 QSE213C/QSE214C Plastic Silicon Infrared Phototransistor Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) Parameter Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit °C °C °C °C V V mW Electrical/Optical Characteristics (TA =25°C unless otherwise specified) Symbol Parameter λPS Q ID BVCEO BVECO IC(ON) Peak Sensitivity Reception Angle C...