RF3S49092SM

RF3S49092SM Data Sheet September 2004 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This product achieves full rated conduction at a gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49092. Features 20A, 12V (N-Channel) 10A, 12V (P-Channel) rDS(ON) = 0.060Ω (N-Channel) rDS(ON) = 0.140Ω (P-Channel) Temperature Compensating PSPICE® Model On-Resistance vs Gate Drive Voltage Curves Peak Current vs Pulse Width Curve UIS Rating Curve Symbol S2 Ordering Information PART NUMBER RF3S49092SM PACKAGE MO-169AB BRAND F3S49092 G2 NOTE: When ordering, use the entire part number. For ordering the MO-169AB in tape and reel, add the suffix 9A to the part number, i.e., RF3S49092SM9A. D1 G1 S1 Packaging JEDEC MO-169AB G2 S2 D G1 S1 ©2004 Fairchild Semiconductor Corporation RF3S49092SM Rev. C RF3S49092SM Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified N-CHANNEL 12 12 ±10 20 Refer to Peak Current Curve Refer to UIS Curve 50 0.33 -55 ...