Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Low RDS(ON) : 0.225 Ω (Typ.)
1
SFW/I9530
BVDSS = -100 V RDS(on) = 0.3 Ω ID = -10.5 A
D2-PAK
2
o
I2-P...