ZTX614

ZTX614 ZTX614 NPN Darlington Transistor These device is designed for applications requiring extremely high gain at collector currents to 0.5A and high breakdown voltage. Sourced from process 06. C BE TO-226 Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 100 120 10 800 -55 ~ +150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition IC = 10mA, IB = 0 IC = 100µA, IE = 0 IE = 100µA, IC = 0 VCB = 60V, IE = 0 VEB = 8V, IC = 0 IC = 100mA, VCE = 5V IC = 500mA, VCE = 5V IC = 800mA, IB = 8mA IC = 800mA, VBE = 5V 5000 10000 1.25 1.8 V V Min. 100 120 10 0.1 0.1 µA µA Typ. Max. Units V V Off Characteristics Collector-Emitter Breakdown Voltage* V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(on) Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage On Characteristic...