ZTX749

ZTX749 ZTX749 PNP Low Saturation Transistor This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. C BE TO-226 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -25 -35 -5 -2 -55 ~ +150 Units V V V A °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter Test Condition IC = -10mA IC = -100µA IE = -100µA VCB = -30V VCB = -30V, TA = 100°C VEB = -4V IC = -50mA, VCE = -2V IC = -1A, VCE = -2V IC = -2A, VCE = -2V IC = -6A, VCE = -2V IC = -1A, IB = -100mA IC = -2A, IB = -200mA IC = -1A, IB = -100mA IC = -1A, VCE = -2V VCB = -10V, IE = 0, f = 1MHz IC = 1-00mA, VCE = -5V f = 100MHz 100 70 100 75 15 Min. -25 -35 -5 -100 -10 -100 Max. Units V V V nA µA nA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain On Charact...