BFR93

BFR93/BFR93R Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 1 2 3 94 9280 3 2 95 10527 BFR93 Marking: R1 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter BFR93R Marking: R4 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb ≤ 60°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 12 2 40 200 150 –65 to +150 Unit V V V mA mW °C °C Maximum Thermal Resistance Parameters Junction ambient Symbol RthJA Value 450 Unit K/W TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 1 (5) BFR93/BFR93R Electrical DC Characteristics Tj = 25°C, unless otherwise specified Parameters / Test Conditions Collector-emitter cut-off current VCE = 20 V, VBE = 0 Collector-base cut-off current VCB = 10 V, IE = 0 Emitter-base cut-off current VEB = 2 V, IC = 0 Collector-emitter breakdown voltage IC = 1 mA, IB = 0 DC forward current transfer ratio VCE = 5 V, IC = 30 mA Symbol ICES ICBO IEBO V(BR)CEO hFE 12 25 50 150 Min. Typ. Max. 100 100 10 Unit mA nA mA V Electrical AC Characteristics Tamb = 25°C Parameters / Test Conditions Transition frequency VCE = 5 V, IC = 30 mA, f = 500 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Collector base cap...