KSB811

KSB811 KSB811 Audio Frequency Power Amplifier Complement to KSD1021 Collector Current : IC= -1A Collector Power Dissipation : PC=350mW 1 TO-92S 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -30 -25 -5 -1.0 350 150 -55 ~ 150 Units V V V A mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -100µA, IE= 0 IC= -10mA, IB= 0 IE= -100µA, IC= 0 VCB= -30V, IE=0 VCE= -1V, IC= -100mA IC= -1A, IB= -0.1A IC= -1A, IB= -0.1A VCE= -6V, IC= -10mA VCB= -6V, IE=0, f=1MHz 110 18 70 Min. -30 -25 -5 -0.1 400 -0.5 -1.2 V V MHz pF Typ. Max. Units V V V µA hFE Classification Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSB811 Typical Characteristics -1.0 -0.9 1000 VCE = -1V IC[A], COLLECTOR CURRENT -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 -0.0 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9...