KSC2500
KSC2500
Medium Power Amplifier & Low Saturation
1
TO-92L
1. Emitter 2. Collector 3. Base
NPN Epitaxial Sili...
KSC2500
KSC2500
Medium Power Amplifier & Low Saturation
1
TO-92L
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon
Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCES VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Base Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 30 30 10 6 2 5 0.5 900 150 -55 ~ 150 Units V V V V A A A mW °C °C
* PW≤10ms, Duty Cycle≤30%
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol ICBO IEBO BVCBO BVEBO hFE 1 hFE 2 VCE (sat) VBE (on) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB=30V, IE=0 VEB=6V, IC=0 IC=10mA, IB=0 IE=1mA, IC=0 VCE=1V, IC=0.5A VCE=1V, IC=2A IC=2A, IB=50mA VCE=1V, IC=2A VCE=1V, IC=0.5A VCB=10V, IE=0, f=1MHz 10 6 140 70 600 200 0.2 0.86 150 27 0.5 1.5 V V MHz pF Min. Typ. Max. 100 100 Units nA nA V V
hFE1 Classification
Classification hFE1 A 140 ~ 240 B 200 ~ 330 C 300 ~ 450 D 420 ~ 600
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2500
Typical Characteristics
5
IB = 50mA IB = 40mA
10000
EMITTER COMMON Ta=25 C hFE, DC CURRENT GAIN
o
EMITTER COMM...