MWS5114

MWS5114 March 1997 1024-Word x 4-Bit LSI Static RAM Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output and utilizes a single power supply of 4.5V to 6.5V. The MWS5114 is supplied in 18 lead, hermetic, dual-in-line sidebrazed ceramic packages (D suffix) and in 18 lead dualin-line plastic packages (E suffix). Features Fully Static Operation Industry Standard 1024 x 4 Pinout (Same as Pinouts for 6514, 2114, 9114, and 4045 Types) Common Data Input and Output Memory Retention for Standby Battery Voltage as Low as 2V Min All Inputs and Outputs Directly TTL Compatible Three-State Outputs Low Standby and Operating Power Ordering Information 200ns MWS5114E3 MWS5114D3 MWS5114D3X 250ns MWS5114E2 MWS5114E2X MWS5114D2 300ns MWS5114E1 MWS5114D1 TEMPERATURE RANGE 0oC to +70oC 0oC to +70oC PACKAGE PDIP Burn-In SBDIP Burn-In PKG. NO. E18.3 E18.3 D18.3 D18.3 Pinout MWS5114 (PDIP, SBDIP) TOP VIEW A6 A5 A4 A3 A0 A1 A2 CS VSS 1 2 3 4 5 6 7 8 9 18 VDD 17 A7 16 A8 15 A9 14 I/O1 13 I/O2 12 I/O3 11 I/O4 10 WE OPERATIONAL MODES FUNCTION Read Write Not Selected CS 0 0 1 WE 1 0 X DATA PINS Output: Dependent on data Input High Impedance CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http:...