DatasheetsPDF.com

NGA-486 Dataheets PDF



Part Number NGA-486
Manufacturers Sirenza Microdevices
Logo Sirenza Microdevices
Description Cascadable InGap/GaAS HBT MMIC Amplifier
Datasheet NGA-486 DatasheetNGA-486 Datasheet (PDF)

Product Description NGA-486 Sirenza Microdevices’ NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 M.

  NGA-486   NGA-486


Document
Product Description NGA-486 Sirenza Microdevices’ NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 80mA , the NGA-486 typically provides +39.5 dBm output IP3, 14.8 dB of gain, and +19 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Gain & Return Loss vs. Freq. @T L=+25°C DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier See Application Note AN-059 for Alternates OBSOLETE Product Features • High Gain : 14.1 dB at 1950 MHz • Cascadable 50 Ohm • Patented InGaP Technology • Operates From Single Supply • Low Thermal Resistance Package 16 12 Gain (dB) IRL GAIN 0 -10 -20 -30 -40 0 1 2 3 4 Frequency (GHz) 5 6 Return Loss (dB) 8 4 0 ORL Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS • IF Amplifier • Wireless Data, Satellite Units dB dBm dBm M Hz dB dB dB V mA °C/W 1950 M Hz 1950 M Hz 1950 M Hz 4.5 75 Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 850 M Hz 1950 M Hz Min. 13.3 Ty p. 14.8 14.1 13.5 19.0 18.2 39.5 34.0 5000 14.5 15.5 4.0 4.8 80 145 5.2 88 Max. 16.3 Sy mbol G P1dB OIP3 Parameter Small Signal Gain Output Pow er at 1dB Compression Output Third Order Intercept Point Bandw idth Determined by Return Loss (>10dB) IRL ORL NF VD ID RTH, j-l Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead) VS = 8 V RBIAS = 39 Ohms ID = 80 mA Typ. TL = 25ºC Test Conditions: OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101104 Rev. OBS Preliminary OBSOLETE NGA-486 DC-5 GHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Frequency (MHz) Frequency (MHz) Sy mbol Parameter Unit 100 500 850 1950 2400 3500 G OIP3 P1dB IRL ORL S21 NF Small Signal Gain Output Third Order Intercept Point Output Pow er at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure VS V ==88V V S 39 Ohms RBIAS R == 39 Ohms BIAS L dB dBm dBm dB dB dB dB 15.1 39.9 19.3 21.7 35.8 18.5 3.9 S 14.9 40.2 19.2 20.1 29.5 18.5 3.7 L 14.8 39.5 19.0 18.0 24.3 18.5 3.8 14.1 34.0 18.2 14.5 15.5 18.4 4.0 13.5 32.5 17.6 14.8 15.0 18.3 4.0 12.0 28.4 14.6 17.4 16.6 17.9 4.0 Test Conditions: Test Conditions: ID==80 80mA mA Typ. Typ. ID 25ºC TTL == 25ºC OIP3Tone ToneSpacing Spacing==11MHz, MHz, Pout Poutper pertone tone==00dBm dBm OIP 3 50 Ohms ZZS == ZZL == 50 Ohms Noise Figure vs. Frequency VD= 4.8 V, ID= 80 mA 5.0 Noise Figure (dB) 4.5 4.0 3.5 3.0 2.5 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) Absolute Maximum Ratings Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Pow er Max. Junction Temp. (TJ) Absolute Limit 100 mA 6V +15 dBm +150°C -40°C to +85°C +150°C TL=+25ºC Operating Temp. Range (TL) Max. Storage Temp. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the follow ing expression: IDVD < (TJ - TL) / RTH, j-l OIP3 vs. Frequency VD= 4.8 V, ID= 80 mA 45 40 OIP3 (dBm) 35 30 25 20 15 0 0.5 1 1.5 2 2.5 Frequency (GHz) 3 3.5 22 +25°C -40°C +85°C P1dB vs. Frequency VD= 4.8 V, ID= 80 mA TL 20 P1dB (dBm) 18 16 14 12 10 0 0.5 1 TL +25°C -40°C +85°C 1.5 2 2.5 Frequency (GHz) 3 3.5 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101104 Rev. OBS Preliminary OBSOLETE NGA-486 DC-5 GHz Cascadable MMIC Amplifier |S | vs. Frequency 18 15 S21 (dB) 12 9 6 3 0 0 1 2 3 4 Frequency (GHz) 5 6 S11 (dB) VD= 4.8 V, ID= 80 mA 21 |S | vs. Frequency -5 VD= 4.8 V, ID= 80 mA 11 TL +25°C -40°C +85.


MFP-A2422 NGA-486 NGA-489


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)