SBF-5089Z

Product Description Sirenza Microdevices’ SBF-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. G ain & R etu rn L o ss V s F req u en cy + 25c 25 22 .5 20 17 .5 15 12 .5 10 7 .5 5 0 10 0 20 0 3 00 4 00 50 0 60 0 7 00 80 0 90 0 S2 1 S1 1 S2 2 SBF-5089 SBF-5089Z Pb RoHS Compliant & Green Package DC-500 MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Product Features Available in Lead Free, RoHS compliant, & Green packaging IP3 = 41dBm @ 240MHz Stable Gain Over Temperature Robust 1000V ESD, Class 1C Operates From Single Supply Low Thermal Resistance 0 -5 -10 -15 -20 -25 -30 -35 -40 IRL, ORL (dB) Gain(dB) Applications Receiver IF Applications Cellular,...