SCP-4926

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 1138, REV. D SCP-4926 HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL V (BR)DSS IDSS (AT Tj=250C UNLESS OTHERWISE SPECIFIED) CONDITION V GS =0V,ID=0.5 mA, Tj = 25 oC V GS =0V, V DS=1000V, Tj = 25 oC V DS=1000V, Tj = 125 oC V GS =10V TC = 25 oC V DS = V GS ID = 0.50mA V GS = 10 V, ID = 0.80 A V DS = 25 V, V GS = 0 V, f = 1 MHz V GS = 10 V, ID = 1 A, V DD = 400 V V DD = 500 V, V GS = 10 V, ID = 1.0 A MI N TYP MAX UNIT POWER MOSFETS Q1,…,6 Drain-to-Source Breakdown Voltage for each one of Q1,2,…,6 Drain-to-Source Leakage Current 1000 0.250 2 1 4 4.0 11.0 V mA A A V Ω pF Continuous Drain Current Maximum Pulsed Drain Current (1) Gate-Source Threshold Voltage Static Drain-to-Source On Resistance Input Capacitance Output Capacitance Reverse Transfer Cap. Total Gate Charge Turn-on Delay Rise Time Turn-off Delay Fall Time Junction to Base Thermal Resistance Nominal Gate-to-source Zener Breakdown Voltage, IZ = 1mA Operating and Storage Junction Temperature Operating Case Temperature Pin-To-Base plate Voltage Isolation Forward Voltage Reverse Recovery Time ID IDM V GS(th) RDS Ciss Coss Crss QG td(on) tr td(off) tf Rthjc VZ Tj Tj V iso VF trr 2.0 - - 500 52 17 38 10 17 58 31 ±18.0 - nC ns ±17.5 -40 -40 1 minute, at sea level IF = 1A Tj = 25 oC, IF = 1 A, di/dt = 50 A/ µs, V rr=400V - 3.7 ±19.0 100 100 10,000 o C/W V o C o C ...